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InGaAs-APD/Preamp Receiver
FEATURES
* Integrated Design Optimizes Performance at High Bit Rates up to 10 Gb/s applications. * -25 dBm Typical Sensitivity * -7 dBm Overload Power (typ.) * 27 dB Optical Return Loss (ORL) * Integral Thermistor * Simplifies Receiver Circuit Design * Integrated HBT IC preamp
FRM5N143DS
APPLICATIONS
This 80GHz gain bandwidth product APD detector with HBT preamp is intended to function as an optical receiver for DWDM, SONET, SDH optical fiber systems operating at 10Gb/s. This detector operates at both 1310 and 1550nm. The nominal 10k integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuit. It has a typical transimpedance (Zt) value of 1100 The detector preamplifier is DC coupled and has a differential electrical output.
DESCRIPTION
The FRM5N143DS incorporates a high bandwidth InGaAs APD photo diode, a GaAs HBT IC amplifier in a hermetically sealed butterfly type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding. It has differential output with DC coupling.
Edition 1.1 July 2004
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FRM5N143DS
ABSOLUTE MAXIMUM RATINGS (Tc=25C)
Parameter Storage Temperature Operating Temperature Supply Voltage APD Reverse Voltage APD Reverse Current Symbol Tstg Top Vss VR IR
InGaAs-APD/Preamp Receiver
Ratings -40 to +85 0 to +70 -6 to 0 0 to VB (Note 1) 1.0
Unit C C V V mA
OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,550nm, Vss=-5.2V, unless otherwise specified)
Parameter APD Responsivity APD Breakdown Voltage Temperature Coefficient of VB AC Transimpedance Symbol R15 VB Zt BW Test Conditions 1,550nm, M=1 ID=10A (Note 2) RL=50, f=130MHz, RL=50, M=9, -3dB from 130MHz, Pin = -20dBm NRZ, 10Gb/s, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value NRZ, 10Gb/s, PRBS=223-1, B.E.R.=10-10, M = 3 Vss=0V Vss=0V Min. 0.65 20 0.03 800 Limits Typ. 0.7 30 0.05 1100 Max. 35 0.07 1400 Unit A/W V V/C GHz
Bandwidth
7.5
8.0
-
Sensitivity
Pr
-
-25
-24
dBm
Maximum Overload
Po ORL Iss Vss Rtr B
-8
-7
-
dBm
Optical Return Loss Power Supply Current Power Supply Voltage Thermistor Resistance Thermistor B Constant
27 -5.46 9.5 3,800
110 -5.2 10 3,900
130 -4.94 10.5 4,000
dB mA V k K
Note: (1) VB differs from device to device. VB data is attached to each devices. (2) =dVB/dTC
2
InGaAs-APD/Preamp Receiver
Fig. 1 Multiplication vs. Photocurrent
1.0E-02
Tc=25C Vss=-5.2V Pin = -7dBm -10dBm -13dBm -20dBm -27dBm
FRM5N143DS
Fig. 2 Multiplication Characteristics
100
Vss=-5.2V Ipo=2A
70C
Photocurrent (A)
1.0E-03
Multiplication Factor (M)
0C
10
25C
1.0E-04
1
1.0E-05
1.0E-06
1
10
20
30
40
0.1
0
10
20
30
40
Reverse Voltage VR(V)
Reverse Voltage VR(V)
Fig. 3 Relative Frequency Response
Tc = 25C Vss=-5.2V RL=50 Pin=-27dBm = 1,550nm
Fig. 4 Multiplication vs. Bandwidth
100
GB Product 80GHz Tc=25C Vss=-5.2V RL=50 =1,550nm Pin=-27dBm
Relative Response (3dB/div)
M=6 M=3
Bandwidth (GHz)
M=9
10
1
5
10
15
1
1
10
100
Frequency, f (GHz) Fig. 5 Bit Error Rate
10-3
=1,550nm 9.95328Gb/s, NRZ duty, mark density=0.5 Vss=-5.2V M=optimum
Multiplication Factor (M)
10-4
Bit Error Rate
10-5 10-6 10-7 10-8 10-10 10-12 -30
0C 70C 25C
-28
-26
-24
-22
Received Optical Power (dBm)
3
FRM5N143DS
-23
InGaAs-APD/Preamp Receiver
Fig. 6 Sensitivity vs. Multiplication Factor Minimum Sensitivity, Pr (dBm)
Mopt: M = 8
-24
-25
-26
-27
0
5
10
15
20
Multiplication Factor, M Fig. 7 Input Wave Form 1,550nm, 9.9532Gb/s NRZ, 223-1 PRBS, duty and mark density=0.5
20psec/div
Fig. 8 Output Wave Form Tc=25C, RL=50 Pin=-26dBm, Vss=-5.2V, M=9
DATA
DATA
20psec/div
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InGaAs-APD/Preamp Receiver
FRM5N143DS
Fig. 9 Output Wave Form Tc=25C, RL=50, Pin=-20dBm Vss=-5.2V, M=3
20psec/div
Fig. 10 Output Wave Form Tc=25C, RL=50, Pin=-7dBm, Vss=-5.2V, M=3
20psec/div
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FRM5N143DS
InGaAs-APD/Preamp Receiver
FRM5N143DS Recommended Circuit
6.8nF 0.47F
47
#16
#14
#13
#12
#11
50
#8 (OUT) DC-coupled
50 PD 20 to 50
#9 (OUT)
220pF
#2,7,10 (GND) (>10nF) (>10nF)
#1 (VR)
#3 (Vss)
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InGaAs-APD/Preamp Receiver
"DS" PACKAGE
5XP1.57=6.35 11.5 12-0.4
6 1
#
FRM5N143DS
UNIT: mm
PIN DESIGNATIONS PD Bias (+) Case Ground Power Supply For Preamp NC NC NC Case Ground Output (-) Output (+) Case Ground DC Feedback Out Feedback 1 Feedback 2 DC Feedback In NC Thermistor For APD NC For Pin
28.830.5
o5.4
o5.0
1.270.1
2.00.3
3.4
11
16
8.7 9.1 15.45 20.25 12.7
4-o2.2 3.8
+0.3 -0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
20.83
25.83
29.83
0.635
3.175
2-0.4
2-0.2
o0.9
6.9
L
For further information please contact:
3.4
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111
www.us.eudyna.com
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
Eudyna Devices Inc.
Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170
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